Optoelectronics processing module and method for manufacturing thereof

ABSTRACT

An optoelectronics processing module includes a transparent substrate and at least one optoelectronics component. One surface of the transparent substrate is formed with a plurality of first pads and a plurality of second pads. The optoelectronics component mounted on the transparent substrate has a plurality of connecting pads, which is irradiated with a laser beam and is then connected with the first pads.

BACKGROUND OF THE INVENTION

1. Field of Invention

The invention relates to an optoelectronics processing module and amethod for manufacturing thereof and, in particular, to anoptoelectronics processing module and a method for manufacturingthereof, which can connect an optoelectronics component to a transparentsubstrate.

2. Related Art

In general, optoelectronics industries include the following scopes,which are optoelectronics components, optoelectronics, displays, opticalinputs/outputs, optical storages, optical communications, laser andother optoelectronics applications. Herein, the optoelectronicscomponents include light-emitting components such as light-emittingdiodes, light-receiving components such as charge coupled devices(CCDs), and compound components such as photo couplers. The opticalinputs/outputs are related to the products including image scanners,barcode scanners, laser printers, facsimile machines, digital video,digital cameras, and the likes. Furthermore, the trend of the recentmarket is to integrate the communication products and optoelectronicsproducts. For example, the function of camera or video is installed onthe mobile phone or PDA.

In view of the above-mentioned optoelectronics products, the opticalinput/output products, such as digital cameras or videos, include anoptoelectronics processing module for picture or image signaltransformation processes. As shown in FIG. 1, a conventionaloptoelectronics processing module 1 mainly includes a carrier 11, anoptical component 12, a supporter 13, and a glass plate 14. The opticalcomponent 12 has a light-receiving area 121, and is disposed on thecarrier 11 with an adhesive layer 16. A set of wires 15 is provided toconnect the optical component 12 to pads 111 of the carrier 11. Thesupporter 13 is disposed at the periphery of the optical component 12and is for supporting the glass plate 14. In addition, theoptoelectronics processing module 1 is disposed on and is connected to acircuit substrate 9 via the connections of the internal traces 112 ofthe carrier 11 and traces 91 of the circuit substrate 9.

As mentioned above, when the conventional optoelectronics processingmodule 1 is employed in a digital camera or video, the optical component12 can be a CCD or a CMOS (complementary metal oxide semiconductor)image sensor. The entire height h1 of this structure is the sum of thesubstrate height H and the height of the optoelectronics processingmodule 1. For the digital cameras, digital videos and the likes, sincethe development trend thereof is lightweight and compact, the entireheight h1, including the substrate height H and the height of theoptoelectronics processing module 1, is intimately related to theoutline design and functions of these products. In brief, if the entireheight h1 is properly decreased, the optoelectronics products can becomemore lightweight and compact. Furthermore, if the entire height h1 isproperly decreased, the usable internal space of the optoelectronicsproduct can be increased. It is therefore an important subjective todecrease the entire height h1 including the substrate height H and theheight of the optoelectronics processing module 1.

SUMMARY OF THE INVENTION

In view of the foregoing, the invention is to provide an optoelectronicsprocessing module, which has a simple structure and is easilymanufactured so as to decrease the entire height thereof.

In addition, the invention is to provide a method for manufacturing anoptoelectronics processing module, which has a simple structure and iseasily manufactured so as to decrease the entire height of theoptoelectronics processing module.

To achieve the above, an optoelectronics processing module of theinvention includes a transparent substrate and at least oneoptoelectronics component. One surface of the transparent substrate isformed with a plurality of first pads and a plurality of second pads.The optoelectronics component, mounted on the transparent substrate, hasa plurality of connecting pads, which is irradiated with a laser beamand is then connected with the first pads.

As mentioned above, since the optoelectronics processing module of theinvention has the optoelectronics component on the transparentsubstrate, the height of the optoelectronics processing module isapproximately equal to the sum of the height of the transparentsubstrate and the height of the optoelectronics component. Comparingwith the conventional optoelectronics processing module, the height ofthe optoelectronics processing module of the invention is greatlydecreased. In particular, since the optoelectronics processing module ofthe invention utilizes the flip-chip technology, the optoelectronicscomponent of the optoelectronics processing module of the invention canbe accommodated in an opening of a circuit substrate when connecting theoptoelectronics processing module to the circuit substrate. Therefore,the entire height of this structure can be sufficiently decreased.

In addition, the method for manufacturing an optoelectronics processingmodule of the invention includes the following steps of: bonding anoptoelectronics component to a transparent substrate, wherein connectingpads of the optoelectronics component are respectively aligned to firstpads of the transparent substrate; and illuminating a laser beam from aside of the transparent substrate to irradiate the connecting pads andthe first pads so as to connect the connecting pads and thecorresponding first pads.

As mentioned above, since the method for manufacturing theoptoelectronics processing module of the invention disposes theoptoelectronics component on the transparent substrate, the height ofthe optoelectronics processing module is approximately equal to the sumof the height of the transparent substrate and the height of theoptoelectronics component. Comparing with the conventionaloptoelectronics processing module, the height of the optoelectronicsprocessing module manufactured according to the method of the inventionis greatly decreased. In particular, since the method for manufacturingthe optoelectronics processing module of the invention utilizes theflip-chip technology, the optoelectronics component of theoptoelectronics processing module can be accommodated in an opening of acircuit substrate when connecting the optoelectronics processing moduleto the circuit substrate. Therefore, the entire height of this structurecan be sufficiently decreased.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will become more fully understood from the detaileddescription given hereinbelow illustration only, and thus is notlimitative of the present invention, and wherein:

FIG. 1 is a sectional schematic view showing the conventionaloptoelectronics processing module;

FIG. 2 is a sectional schematic view showing an optoelectronicsprocessing module according to a preferred embodiment of the invention;

FIG. 3 is a sectional schematic view showing another optoelectronicsprocessing module according to the preferred embodiment of theinvention;

FIG. 4 is a schematic view showing the optoelectronics processing moduleaccording to a preferred embodiment of the invention disposed on acircuit substrate;

FIG. 5 is a sectional schematic view showing an optoelectronicsprocessing module according to another preferred embodiment of theinvention;

FIG. 6 is a sectional schematic view showing another optoelectronicsprocessing module according to the another preferred embodiment of theinvention;

FIG. 7 is a schematic view showing the optoelectronics processing moduleaccording to a preferred embodiment of the invention disposed on acircuit substrate;

FIG. 8 is a schematic view showing a transparent substrate utilized inaccordance with a method for manufacturing the optoelectronicsprocessing modules according to a preferred embodiment of the invention;

FIG. 9 is a schematic view showing the optoelectronics components bondedto the transparent substrate in accordance with the method formanufacturing the optoelectronics processing modules according to thepreferred embodiment of the invention;

FIG. 10 is a schematic view showing a laser beam is used to connect theoptoelectronics component to the transparent substrate in accordancewith the method for manufacturing the optoelectronics processing modulesaccording to the preferred embodiment of the invention;

FIG. 11 is a schematic view showing cutting the transparent substrate inaccordance with the method for manufacturing the optoelectronicsprocessing modules according to the preferred embodiment of theinvention; and

FIG. 12 is a schematic view showing another transparent substrateutilized in accordance with the method for manufacturing theoptoelectronics processing modules according to the preferred embodimentof the invention, wherein a laser beam is used to connect theoptoelectronics components and the transparent substrate.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will be apparent from the following detaileddescription, which proceeds with reference to the accompanying drawings,wherein the same references relate to the same elements.

With reference to FIG. 2, an optoelectronics processing module 2according to a preferred embodiment of the invention includes atransparent substrate 21 and at least one optoelectronics component 22.One surface of the transparent substrate 21 is formed with a pluralityof first pads 211 and a plurality of second pads 212 for externalconnections (as shown in FIG. 8). The first pads 211 and the second pads212 are respectively connected to one another with the traces 213. Theoptoelectronics component 22 includes a light-receiving (orlight-emitting) area 221 and a plurality of connecting pads (not shown).After being irradiated by a laser beam, the connecting pads and thefirst pads 211 (as shown in FIG. 8) respectively connect to one anothersuch as the reference number 211′ shown in FIG. 2 or FIG. 3. Thus, theoptoelectronics component 22 can be disposed on the transparentsubstrate 21. In the present embodiment, the optoelectronics component22 can be a light-emitting component or a light-receiving component. Thelight-receiving component is, for example, a CCD or a CMOS image sensor.The transparent substrate 21 can be a glass substrate.

Referring to FIG. 3, the optoelectronics processing module 2 may furtherinclude a molding compound 23, which is extended from the edge of theoptoelectronics component 22 to the transparent substrate 21. Inaddition, the optoelectronics processing module 2 may further include aflexible substrate 24, which electrically connects to the transparentsubstrate 21 via the second pads 212. In such a case, when installingthe optoelectronics processing module 2 to an optoelectronics product,the assembling processes become more convenient.

In the optoelectronics processing module 2, since the optoelectronicscomponent 22 is disposed on the transparent substrate 21 by flip-chiptechnology and the transparent substrate 21 has the second pads 212, theoptoelectronics processing module 2 can be disposed on a circuitsubstrate 9 by flip-chip technology. As shown in FIG. 4, the circuitsubstrate 9 includes a plurality of traces 91 and an opening 92. Theoptoelectronics processing module 2 electrically connects to the traces91 via the second pads 212, and the optoelectronics component 22 isaccommodated in the opening 92. With reference to FIG. 4, theoptoelectronics component 22 is accommodated in the opening 92, and isdisposed on the transparent substrate 21 by flip-chip technology.Therefore, assuming the height of the circuit substrate 9 is H, which isthe same as that of the conventional case, the entire height h2including the optoelectronics processing module 2 and the circuitsubstrate 9 of the embodiment is sufficiently smaller than the entireheight h1 including the optoelectronics processing module 1 and thecircuit substrate 9 as described previously.

Hereinafter, an optoelectronics processing module according to anotherembodiment of the invention is described with reference to FIG. 5 toFIG. 7. In concise purpose, the reference number of the same element isthe same to that mentioned in the previous embodiment, and thedescriptions of the same element are omitted.

Referring to FIG. 5, to make the optoelectronics component 22 and thetransparent substrate 21 be connected easier, a bump 222 can be providedon each connecting pad of the optoelectronics component 22. The bump 222can be a solder bump or a gold bump. Of course, a bump 214, such assolder bump or gold bump, can be disposed on each second pad of thetransparent substrate 21.

With reference to FIG. 6, the optoelectronics processing module 2 ofthis embodiment further includes a molding compound 23, which isdisposed from the edge of the optoelectronics component 22 to thetransparent substrate 21. To be noted, although the molding compound 23is mainly for airtightly sealing the optoelectronics component 22 andthe transparent substrate 21, it can has a preset hole for preventingproblems caused by the air expansion and contraction between theoptoelectronics component 22 and the transparent substrate 21. Inaddition, the optoelectronics processing module 2 of this embodimentfurther includes a flexible substrate 24, which is electricallyconnected to the transparent substrate 21 via the bump 214. As a result,when the optoelectronics processing module 2 is installed in anoptoelectronics product, the assembling processes become moreconvenient. Furthermore, as shown in FIG. 7, when disposing theelectronics processing module 2 on the circuit substrate 9, theconnection between the electronics processing module 2 and the circuitsubstrate 9 is through the bumps 214 of the transparent substrate 21 andthe traces 91 of the circuit substrate 9.

As mentioned above, since the optoelectronics processing module 2 of theinvention has the optoelectronics component 22 on the transparentsubstrate 21, the height of the optoelectronics processing module 2 isapproximately equal to the sum of the height of the transparentsubstrate 21 and the height of the optoelectronics component 22.Comparing with the conventional optoelectronics processing module 1, theheight of the optoelectronics processing module 2 of the invention isgreatly decreased. In particular, since the optoelectronics processingmodule 2 of the invention utilizes the flip-chip technology, theoptoelectronics component 22 of the optoelectronics processing module 2can be accommodated in an opening 92 of the circuit substrate 9 whenconnecting the optoelectronics processing module 2 to the circuitsubstrate 9. Therefore, the entire height of this structure can besufficiently decreased. Moreover, if the optoelectronics processingmodule 2 of the invention includes the flexible substrate 24 such thatthe circuit substrate 9 is unnecessary, the entire height thereof can befurther decreased.

Hereinafter, a method for manufacturing an optoelectronics processingmodule according to an embodiment of the invention is described withreference to FIG. 8 to FIG. 12. In concise purpose, the descriptions ofthe structure of the optoelectronics processing module are omitted.

The method for manufacturing an optoelectronics processing module is forconnecting an optoelectronics component to a transparent substrate.Wherein, the optoelectronics component has a plurality of connectingpads, and one surface of the transparent substrate has a plurality offirst pads and a plurality of second pads. The method includes thefollowing steps of: bonding the optoelectronics component to thetransparent substrate, wherein the connecting pads are respectivelyaligned to the first pads of the transparent substrate; and illuminatinga laser beam from a side of the transparent substrate to irradiate theconnecting pads and the first pads so as to connect the connecting padsand the corresponding first pads.

In practice, in order to decrease the manufacturing cost, the method ofthe embodiment may, in advance, provide a transparent substrate 21(glass substrate) having a plurality of preformed optoelectronicscomponent bonding areas. As shown in FIG. 8, each optoelectronicscomponent bonding area of the transparent substrate 21 includes aplurality of first pads 211 and a plurality of second pads 212 formed onthe surface thereof. The first pads 211 and the second pads 212 arerespectively connected to each other via the traces 213. With referenceto FIG. 9, a plurality of optoelectronics components 22 are sequentiallyattached to the transparent substrate 21 by flip-chip technology. As aresult, each connecting pad of the optoelectronics component 22 isaligned to each first pad 211 of the transparent substrate 21.

When the optoelectronics components 22 are respectively attached to thetransparent substrate 21, as shown in FIG. 10, a laser beam isilluminated from one side of the transparent substrate 21 (as the arrow)to irradiate each connecting pad and the corresponding first pad 211.Accordingly, each connecting pad and the corresponding first pad 211 canconnect with each other. Finally, as shown in FIG. 11, the transparentsubstrate 21 is cut according to each optoelectronics component bondingarea. Thus, a single optoelectronics processing module can be obtained.Certainly, a molding compound 23 can be formed at the periphery of eachoptoelectronics component 22 before the cutting process. The moldingcompound 23 is disposed from the edge of each optoelectronics component22 to the transparent substrate 21. After the cutting process, eachoptoelectronics processing module 2 may further include a flexiblesubstrate 24.

In addition, as shown in FIG. 12, an optoelectronics component 22 and asemiconductor component 22′ can be disposed on the optoelectronicscomponent bonding area of the transparent substrate 21. In this case,each optoelectronics processing module 2 can equip with a systemfunction.

As mentioned above, since the method for manufacturing theoptoelectronics processing module of the invention disposes theoptoelectronics component 22 on the transparent substrate 21, the heightof the optoelectronics processing module 2 is approximately equal to thesum of the height of the transparent substrate 21 and the height of theoptoelectronics component 22. Comparing with the conventionaloptoelectronics processing module 1, the height of the optoelectronicsprocessing module 2 manufactured according to the method of theinvention is greatly decreased. In particular, since the method formanufacturing the optoelectronics processing module of the inventionutilizes the flip-chip technology, the optoelectronics component 22 ofthe optoelectronics processing module 2 can be accommodated in theopening 92 of the circuit substrate 9 when connecting theoptoelectronics processing module 2 to the circuit substrate 9.Therefore, the entire height of this structure can be sufficientlydecreased. Moreover, if the optoelectronics processing module 2 of theinvention includes the flexible substrate 24 such that the circuitsubstrate 9 is not used, the entire height thereof can be furtherdecreased.

Although the invention has been described with reference to specificembodiments, this description is not meant to be construed in a limitingsense. Various modifications of the disclosed embodiments, as well asalternative embodiments, will be apparent to persons skilled in the art.It is, therefore, contemplated that the appended claims will cover allmodifications that fall within the true scope of the invention.

1. An optoelectronics processing module, comprising: a transparentsubstrate, which has a surface formed with a plurality of first pads anda plurality of second pads for external connections; and at least oneoptoelectronics component, which has a plurality of connecting pads andis mounted on the transparent substrate, wherein the connecting pads andthe first pads are connected to each other, respectively, by irradiationwith a laser beam.
 2. The optoelectronics processing module of claim 1,further comprising: a molding compound, which is extended from the edgeof the optoelectronics component to the transparent substrate.
 3. Theoptoelectronics processing module of claim 1, further comprising: aflexible substrate, which electrically connects to the transparentsubstrate via the second pads.
 4. The optoelectronics processing moduleof claim 1, wherein the optoelectronics component is a light-emittingcomponent.
 5. The optoelectronics processing module of claim 1, whereinthe optoelectronics component is a light-receiving component.
 6. Theoptoelectronics processing module of claim 5, wherein thelight-receiving component is a charge coupled device (CCD) or a CMOS(complementary metal oxide semiconductor) image sensor.
 7. Theoptoelectronics processing module of claim 1, wherein a bump is disposedon one of the connecting pads of the optoelectronics component, and thebump is a solder bump or a gold bump.
 8. The optoelectronics processingmodule of claim 1, wherein a bump is disposed on one of the first padsof the transparent substrate, and the bump is a solder bump or a goldbump.
 9. The optoelectronics processing module of claim 1, wherein abump is disposed on one of the second pads of the transparent substrate,and the bump is a solder bump or a gold bump.
 10. The optoelectronicsprocessing module of claim 1, wherein the transparent substrate is aglass substrate.
 11. A method for manufacturing an optoelectronicsprocessing module, which is for connecting an optoelectronics componentto a transparent substrate, wherein the optoelectronics component has aplurality of connecting pads and one surface of the transparentsubstrate has a plurality of first pads and a plurality of second padsfor external connection, the method comprising: bonding theoptoelectronics component to the transparent substrate, wherein theconnecting pads are respectively aligned to the first pads of thetransparent substrate; and illuminating a laser beam from a side of thetransparent substrate to irradiate the connecting pads and the firstpads so as to connect the connecting pads and the corresponding firstpads.
 12. The method of claim 11, further comprising: disposing amolding compound at the edge of the optoelectronics component, whereinthe molding compound is extended from the edge of the optoelectronicscomponent to the transparent substrate.
 13. The method of claim 11,further comprising: electrically connecting a flexible substrate to thetransparent substrate via the second pads.
 14. The method of claim 11,wherein the optoelectronics component is a light-emitting component. 15.The method of claim 11, wherein the optoelectronics component is alight-receiving component.
 16. The method of claim 15, wherein thelight-receiving component is a charge coupled device (CCD) or a CMOS(complementary metal oxide semiconductor) image sensor.
 17. The methodof claim 11, wherein a bump is disposed on one of the connecting pads ofthe optoelectronics component, and the bump is a solder bump or a goldbump.
 18. The method of claim 11, wherein a bump is disposed on one ofthe first pads of the transparent substrate, and the bump is a solderbump or a gold bump.
 19. The method of claim 11, wherein a bump isdisposed on one of the second pads of the transparent substrate, and thebump is a solder bump or a gold bump.
 20. The method of claim 11,wherein the transparent substrate is a glass substrate.